Part Number Overview

Manufacturer Part Number
FQP7N80C
Description
MOSFET N-CH 800V 6.6A TO220-3
Detailed Description
N-Channel 800 V 6.6A (Tc) 167W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQP7N80C Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP7

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-FQP7N80C-OS
FAIFSCFQP7N80C
2832-FQP7N80C

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP7N80C

Documents & Media

Datasheets
1(FQPF7N80C Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev Asembly Chg 7/May/2020)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(TO220B03 Pkg Drawing)
EDA Models
1(FQP7N80C Models)
Product Drawings
1(TO220B03 Pkg Drawing)

Quantity Price

-

Substitutes

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