Mfr
Infineon Technologies
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
104mOhm @ 13A, 15V
Vgs(th) (Max) @ Id
5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 800 V
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41