Part Number Overview

Manufacturer Part Number
SIHB180N60E-GE3
Description
MOSFET N-CH 600V 19A D2PAK
Detailed Description
N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
E
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1085 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB180

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SIHB180N60E-GE3DKR-ND
SIHB180N60E-GE3DKRINACTIVE
SIHB180N60E-GE3CT
SIHB180N60E-GE3TR
SIHB180N60E-GE3CTINACTIVE
SIHB180N60E-GE3DKR
SIHB180N60E-GE3TR-ND
SIHB180N60E-GE3CT-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB180N60E-GE3

Documents & Media

Datasheets
1(SIHB180N60E)
HTML Datasheet
1(SIHB180N60E)

Quantity Price

Quantity: 1000
Unit Price: $1.6812
Packaging: Bulk
MinMultiplier: 1000

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