Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
20mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
2010pF @ 10V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package
8-SOP (5.5x6.0)
Base Product Number
TPC8207