Part Number Overview

Manufacturer Part Number
HUF75339G3
Description
MOSFET N-CH 55V 75A TO247-3
Detailed Description
N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-247-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
HUF75339G3 Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
HUF75

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUF75339G3

Documents & Media

Datasheets
1(HUF75339G3, P3, S3S)
Environmental Information
()
PCN Design/Specification
1(Plating Material 20/Dec/2007)
HTML Datasheet
1(HUF75339G3, P3, S3S)
EDA Models
1(HUF75339G3 Models)

Quantity Price

-

Substitutes

Part No. : IRFP3306PBF
Manufacturer. : Infineon Technologies
Quantity Available. : 586
Unit Price. : $3.22000
Substitute Type. : Similar