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Part Number Overview
Manufacturer Part Number
DMN90H8D5HCT
Description
MOSFET N-CH 900V 2.5A TO220AB
Detailed Description
N-Channel 900 V 2.5A (Tc) 125W (Tc) Through Hole TO-220-3
Manufacturer
Diodes Incorporated
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
DMN90
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
DMN90H8D5HCT-ND
DMN90H8D5HCTDI
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMN90H8D5HCT
Documents & Media
Datasheets
1(DMN90H8D5HCT)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Obsolete Notice 02/Nov/2022)
PCN Assembly/Origin
1(Mult Dev Site Chg 6/Aug/2020)
Quantity Price
-
Substitutes
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