Part Number Overview

Manufacturer Part Number
IRL3713STRLPBF
Description
MOSFET N-CH 30V 260A D2PAK
Detailed Description
N-Channel 30 V 260A (Tc) 330W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5890 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IRL3713STRLPBFTR
IRL3713STRLPBF-ND
2156-IRL3713STRLPBFTR
IRL3713STRLPBFCT
IRL3713STRLPBFDKR
SP001558656

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3713STRLPBF

Documents & Media

Datasheets
1(IRL3713PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRL3713PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Material Chg 24/Nov/2015)
PCN Packaging
()
HTML Datasheet
1(IRL3713PbF)
Simulation Models
1(IRL3713PBF Spice Model)

Quantity Price

-

Substitutes

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