Part Number Overview

Manufacturer Part Number
IRFR220BTM
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 200 V 4.6A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,760
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FAIFSCIRFR220BTM
2156-IRFR220BTM

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFR220BTM

Documents & Media

Datasheets
1(Datasheet)

Quantity Price

Quantity: 1760
Unit Price: $0.18
Packaging: Bulk
MinMultiplier: 1760

Substitutes

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