TSM60NB190CM2 RNG

Part Number Overview

Manufacturer Part Number

TSM60NB190CM2 RNG

Description

MOSFET N-CH 600V 18A TO263

Detailed Description

N-Channel 600 V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D2PAK)

Manufacturer

Taiwan Semiconductor Corporation

Standard LeadTime

Edacad Model

TSM60NB190CM2 RNG Models

Standard Package

800

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Taiwan Semiconductor Corporation

Series

-

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1273 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

150.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Base Product Number

TSM60

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

TSM60NB190CM2RNGCT

TSM60NB190CM2 RNGCT

TSM60NB190CM2RNGTR

TSM60NB190CM2 RNGDKR-ND

TSM60NB190CM2 RNGDKR

TSM60NB190CM2 RNGTR

TSM60NB190CM2RNGDKR

TSM60NB190CM2 RNGTR-ND

TSM60NB190CM2 RNGCT-ND

Documents & Media

Datasheets

1(TSM60NB190CM2 RNG)

Environmental Information

()

PCN Obsolescence/ EOL

1(OBS 22/Jan/2024)

HTML Datasheet

1(TSM60NB190CM2)

EDA Models

1(TSM60NB190CM2 RNG Models)

Quantity Price

-

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TSM60NB190CM2 RNG

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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