SPP20N65C3HKSA1

Part Number Overview

Manufacturer Part Number

SPP20N65C3HKSA1

Description

MOSFET N-CH 650V 20.7A TO220-3

Detailed Description

N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO220-3-1

Manufacturer

Infineon Technologies

Standard LeadTime

Edacad Model

Standard Package

500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Infineon Technologies

Series

CoolMOS™

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

20.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

114 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Base Product Number

SPP20N

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

SPP20N65C3XK

SPP20N65C3X

SP000014369

SPP20N65C3IN-ND

SPP20N65C3

SPP20N65C3IN

SPP20N65C3-ND

Documents & Media

Datasheets

1(SP(P,A,I)20N65C3)

Quantity Price

-

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56K132-K00L5 ACT94ME26PD-6149 CX10S-BGCDB0-P-A-DK00000 1206J0160474KXR SSW-118-02-S-T-RA-LL

SPP20N65C3HKSA1

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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