Part Number Overview

Manufacturer Part Number
NTD4809NT4G
Description
MOSFET N-CH 30V 9.6A/58A DPAK
Detailed Description
N-Channel 30 V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 11.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 11.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1456 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
-
Base Product Number
NTD48

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

NTD4809NT4GOSCT-ND
NTD4809NT4GOSTR-ND
1990-NTD4809NT4GTR
NTD4809NT4GOSCT
NTD4809NT4GOSDKR
488-NTD4809NT4GTR
NTD4809NT4G-ND
1990-NTD4809NT4GCT
1990-NTD4809NT4GDKR
NTD4809NT4GOSTR
NTD4809NT4GOSDKR-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4809NT4G

Documents & Media

Datasheets
1(N(T,V)D4809N)
Environmental Information
1(Material Declaration NTD4809NT4G)
PCN Assembly/Origin
1(Mult Dev Assembly Sit Add 17/Apr/2018)
HTML Datasheet
1(N(T,V)D4809N)

Quantity Price

-

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