Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
Power Dissipation (Max)
88.3W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad
Base Product Number
TK10V60