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Part Number Overview
Manufacturer Part Number
IPW60R099CPFKSA1
Description
MOSFET N-CH 650V 31A TO247-3
Detailed Description
N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
255W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3
Base Product Number
IPW60R099
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPW60R099CSX
IPW60R099CP
IPW60R099CPXK
IPW60R099CPFKSA1-ND
SP000067147
448-IPW60R099CPFKSA1
IPW60R099CP-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPW60R099CPFKSA1
Documents & Media
Datasheets
1(IPW60R099CP)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPW60R099CP)
Simulation Models
1(CoolMOS™ Power MOSFET 600V CP Spice Model)
Quantity Price
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