Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
6A, 4.1A
Rds On (Max) @ Id, Vgs
24mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
630pF @ 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Supplier Device Package
DFN2020-6U
Base Product Number
MCMNP517