China
Spain
Rusia
Italy
GermanyDF23MR12W1M1B11BOMA1
Part Number Overview
Manufacturer Part Number
DF23MR12W1M1B11BOMA1
Description
SIC 2N-CH 1200V AG-EASY1BM-2
Detailed Description
Mosfet Array 1200V (1.2kV) 25A Chassis Mount AG-EASY1BM-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
24
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
25A
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1BM-2
Base Product Number
DF23MR12
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
SP001602244
IFEINFDF23MR12W1M1B11BOMA1
2156-DF23MR12W1M1B11BOMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies DF23MR12W1M1B11BOMA1
Documents & Media
Datasheets
1(DF23MR12W1M1_B11)
HTML Datasheet
1(DF23MR12W1M1_B11)
Quantity Price
-
Substitutes
Part No. : DF23MR12W1M1B11BPSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 12
Unit Price. : $85.23000
Substitute Type. : Direct
Quantity Available. : 12
Unit Price. : $85.23000
Substitute Type. : Direct