Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 9.4A (Ta)
Rds On (Max) @ Id, Vgs
17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.6nC @ 4.5V, 23.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1787pF @ 6V, 2100pF @ 6V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PowerDI5060-8
Base Product Number
DMC1017