China
Spain
Rusia
Italy
Germany2SA1429-Y(T2OMI,FM
Part Number Overview
Manufacturer Part Number
2SA1429-Y(T2OMI,FM
Description
TRANS PNP 80V 2A MSTM
Detailed Description
Bipolar (BJT) Transistor PNP 80 V 2 A 80MHz 1 W Through Hole MSTM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Power - Max
1 W
Frequency - Transition
80MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
MSTM
Base Product Number
2SA1429
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2SA1429YT2OMIFM
2SA1429-Y(T2OMIFM
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1429-Y(T2OMI,FM
Documents & Media
Datasheets
1(2SA1429)
HTML Datasheet
1(2SA1429)
Quantity Price
-
Substitutes
-