Part Number Overview

Manufacturer Part Number
PMXB65ENE,147
Description
NOW NEXPERIA PMXB65ENE - SMALL S
Detailed Description
N-Channel 30 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,401
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
67mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1010D-3
Package / Case
3-XDFN Exposed Pad

Environmental & Export Classifications

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-PMXB65ENE147-NX
NEXNXPPMXB65ENE,147

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMXB65ENE,147

Documents & Media

Datasheets
1(PMXB65ENE)
HTML Datasheet
1(PMXB65ENE)

Quantity Price

Quantity: 1401
Unit Price: $0.21
Packaging: Bulk
MinMultiplier: 1401

Substitutes

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