AOT11S65L

Part Number Overview

Manufacturer Part Number

AOT11S65L

Description

MOSFET N-CH 650V 11A TO220

Detailed Description

N-Channel 650 V 11A (Tc) 198W (Tc) Through Hole TO-220

Manufacturer

Alpha & Omega Semiconductor Inc.

Standard LeadTime

Edacad Model

Standard Package

1,000

Supplier Stocks

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Technical specifications

Mfr

Alpha & Omega Semiconductor Inc.

Series

aMOS™

Package

Tube

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

399mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13.2 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

646 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

198W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Base Product Number

AOT11

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

AOT11S65L-ND

785-1510-5

5202-AOT11S65L

Documents & Media

Datasheets

1(AOx(F)11S65)

Quantity Price

-

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AOT11S65L

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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