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Part Number Overview
Manufacturer Part Number
IRLW630ATM
Description
MOSFET N-CH 200V 9A I2PAK
Detailed Description
N-Channel 200 V 9A (Tc) 3.1W (Ta), 69W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
755 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRLW63
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi IRLW630ATM
Documents & Media
Datasheets
1(IRLW/I630A)
Environmental Information
()
HTML Datasheet
1(IRLW/I630A)
Quantity Price
-
Substitutes
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