Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id
3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
17.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
414 pF @ 600 V
Power Dissipation (Max)
97W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
C3M0120090