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Part Number Overview
Manufacturer Part Number
FQB9N50TM
Description
MOSFET N-CH 500V 9A D2PAK
Detailed Description
N-Channel 500 V 9A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQB9N50TM Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
730mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB9
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB9N50TM
Documents & Media
Datasheets
1(FQB9N50, FQI9N50)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQB9N50, FQI9N50)
EDA Models
1(FQB9N50TM Models)
Quantity Price
-
Substitutes
-