Part Number Overview

Manufacturer Part Number
SCT50N120
Description
SICFET N-CH 1200V 65A HIP247
Detailed Description
N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCT50N120 Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
318W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT50

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-1138-SCT50N120
497-16598-5

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCT50N120

Documents & Media

Datasheets
()
Product Training Modules
()
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
HTML Datasheet
1(Fine Tune SIC MOSFET Gate Driver)
EDA Models
1(SCT50N120 Models)

Quantity Price

Quantity: 120
Unit Price: $28.51383
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $30.41467
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $36.69
Packaging: Tube
MinMultiplier: 1

Substitutes

Part No. : G3R40MT12D
Manufacturer. : GeneSiC Semiconductor
Quantity Available. : 1,725
Unit Price. : $17.42000
Substitute Type. : Similar
Part No. : MSC040SMA120B
Manufacturer. : Microchip Technology
Quantity Available. : 61
Unit Price. : $24.23000
Substitute Type. : Similar