Part Number Overview

Manufacturer Part Number
FQI17P10TU
Description
P-CHANNEL POWER MOSFET
Detailed Description
P-Channel 100 V 16.5A (Tc) 3.75W (Ta), 100W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
544
Supplier Stocks

Technical specifications

Mfr
Fairchild Semiconductor
Series
QFET™
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-FQI17P10TU
FAIFSCFQI17P10TU

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI17P10TU

Documents & Media

Datasheets
1(FQB17P10TM)

Quantity Price

Quantity: 544
Unit Price: $0.55
Packaging: Bulk
MinMultiplier: 544

Substitutes

-