Part Number Overview

Manufacturer Part Number
SI4210DY-T1-GE3
Description
MOSFET 2N-CH 30V 6.5A 8SOIC
Detailed Description
Mosfet Array 30V 6.5A 2.7W Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
SI4210DY-T1-GE3 Models
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.5A
Rds On (Max) @ Id, Vgs
35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
445pF @ 15V
Power - Max
2.7W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4210

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SI4210DY-T1-GE3-ND
SI4210DY-T1-GE3DKR
SI4210DY-T1-GE3CT
SI4210DY-T1-GE3TR
SI4210DYT1GE3

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4210DY-T1-GE3

Documents & Media

Datasheets
1(SI4210DY)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SI4210DY)
EDA Models
1(SI4210DY-T1-GE3 Models)

Quantity Price

-

Substitutes

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Manufacturer. : Diodes Incorporated
Quantity Available. : 1,061
Unit Price. : $1.15000
Substitute Type. : Similar