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Part Number Overview
Manufacturer Part Number
TPH3207WS
Description
GANFET N-CH 650V 50A TO247-3
Detailed Description
N-Channel 650 V 50A (Tc) 178W (Tc) Through Hole TO-247-3
Manufacturer
Transphorm
Standard LeadTime
Edacad Model
TPH3207WS Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Transphorm
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 8V
Vgs(th) (Max) @ Id
2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
2197 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
178W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TPH3207WS
Documents & Media
Datasheets
1(TPH3207WS Datasheet)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
PCN Obsolescence/ EOL
1(TPH320 28/May/2019)
PCN Part Status Change
1(Mult Dev NRND 20/May/2018)
EDA Models
1(TPH3207WS Models)
Simulation Models
1(TPH3207WS Spice Model)
Quantity Price
-
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