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Part Number Overview
Manufacturer Part Number
RN1106MFV(TL3,T)
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
RN1106MFV(TL3,T) Models
Standard Package
8,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1106
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN1106MFVTL3T
RN1106MFV(TL3T)DKR
RN1106MFV(TL3T)TR
RN1106MFV(TL3T)CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1106MFV(TL3,T)
Documents & Media
Datasheets
1(RN1101-6MFV)
HTML Datasheet
1(RN1101-6MFV)
EDA Models
1(RN1106MFV(TL3,T) Models)
Quantity Price
-
Substitutes
Part No. : RN1106MFV,L3F
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 53,233
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Substitute Type. : Similar
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Unit Price. : $0.39000
Substitute Type. : Similar
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Manufacturer. : onsemi
Quantity Available. : 2,915
Unit Price. : $0.36000
Substitute Type. : Similar
Quantity Available. : 2,915
Unit Price. : $0.36000
Substitute Type. : Similar