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Part Number Overview
Manufacturer Part Number
NDS9952A-F011
Description
MOSFET N/P-CH 30V 2.9A 8SOIC
Detailed Description
Mosfet Array 30V 2.9A 900mW (Ta) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.9A
Rds On (Max) @ Id, Vgs
80mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V, 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 10V
Power - Max
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NDS995
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-NDS9952A-F011TR
2832-NDS9952A-F011TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NDS9952A-F011
Documents & Media
Datasheets
1(NDS9952A)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 8/Apr/2021)
HTML Datasheet
1(NDS9952A)
Quantity Price
-
Substitutes
-