Part Number Overview

Manufacturer Part Number
STW20N65M5
Description
MOSFET N-CH 650V 18A TO247
Detailed Description
N-Channel 650 V 18A (Tc) 130W (Tc) Through Hole TO-247-3
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STW20N65M5 Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ V
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1345 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW20N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

497-13542
-497-13542

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW20N65M5

Documents & Media

Datasheets
1(STx20N65M5)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Assembly/Origin
1(IPG-PWR/14/8674 02/Sep/2014)
HTML Datasheet
1(STx20N65M5)
EDA Models
1(STW20N65M5 Models)

Quantity Price

-

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