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Part Number Overview
Manufacturer Part Number
SQS423EN-T1_GE3
Description
MOSFET P-CH 30V 16A PPAK1212-8
Detailed Description
P-Channel 30 V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1975 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SQS423
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SQS423EN-T1_GE3DKR
SQS423EN-T1_GE3CT
SQS423EN-T1_GE3-ND
SQS423EN-T1_GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQS423EN-T1_GE3
Documents & Media
Datasheets
1(SQS423EN)
HTML Datasheet
1(SQS423EN)
Quantity Price
-
Substitutes
-