Part Number Overview

Manufacturer Part Number
DMT10H009LH3
Description
MOSFET N-CH 100V 84A TO251
Detailed Description
N-Channel 100 V 84A (Tc) 96W (Tc) Through Hole TO-251
Manufacturer
Diodes Incorporated
Standard LeadTime
24 Weeks
Edacad Model
Standard Package
75
Supplier Stocks

Technical specifications

Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20.2 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2309 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
DMT10

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMT10H009LH3

Documents & Media

Datasheets
1(DMT10H009LH3)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Assembly/Origin
1(Assembly REV 07/Sep/2021)

Quantity Price

Quantity: 75
Unit Price: $0.82627
Packaging: Tube
MinMultiplier: 75

Substitutes

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