China
Spain
Rusia
Italy
GermanySI7495DP-T1-E3
Part Number Overview
Manufacturer Part Number
SI7495DP-T1-E3
Description
MOSFET P-CH 12V 13A PPAK SO-8
Detailed Description
P-Channel 12 V 13A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SI7495
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7495DP-T1-E3
Documents & Media
Datasheets
1(SI7495DP)
HTML Datasheet
1(SI7495DP)
Quantity Price
-
Substitutes
-