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Part Number Overview
Manufacturer Part Number
SQP120N10-09_GE3
Description
MOSFET N-CH 100V 120A TO220AB
Detailed Description
N-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
SQP120N10-09_GE3 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8645 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SQP120
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SQP120N10-09_GE3TRINACTIVE
SQP120N10-09_GE3CT-ND
SQP120N10-09_GE3DKR-ND
SQP120N10-09_GE3CT
SQP120N10-09_GE3TR
SQP120N10-09_GE3DKR
SQP120N10-09_GE3DKRINACTIVE
SQP120N10-09_GE3TR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQP120N10-09_GE3
Documents & Media
Datasheets
1(SQP120N10-09)
PCN Obsolescence/ EOL
1(Mult Dev EOL 12/Nov/2021)
HTML Datasheet
1(SQP120N10-09)
EDA Models
1(SQP120N10-09_GE3 Models)
Quantity Price
Quantity: 100
Unit Price: $1.9198
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 50
Unit Price: $2.2398
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $2.83
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
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Quantity Available. : 5
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Unit Price. : $1.53000
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