Part Number Overview

Manufacturer Part Number
BST72A,112
Description
MOSFET N-CH 100V 190MA TO92-3
Detailed Description
N-Channel 100 V 190mA (Ta) 830mW (Ta) Through Hole TO-92-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
BST72A,112 Models
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number
BST7

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

933710530112
BST72A-ND
BST72A

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BST72A,112

Documents & Media

Datasheets
1(BST72A)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BST72A)
EDA Models
1(BST72A,112 Models)

Quantity Price

-

Substitutes

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