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Part Number Overview
Manufacturer Part Number
IPD15N06S2L64ATMA1
Description
MOSFET N-CH 55V 19A TO252-3
Detailed Description
N-Channel 55 V 19A (Tc) 47W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
354 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD15N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPD15N06S2L64ATMA1
IPD15N06S2L-64
IPD15N06S2L-64-ND
IPD15N06S2L64ATMA1TR
SP000252162
2156-IPD15N06S2L64ATMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD15N06S2L64ATMA1
Documents & Media
Datasheets
1(IPD15N06S2L-64)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
()
HTML Datasheet
1(IPD15N06S2L-64)
Quantity Price
-
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