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Part Number Overview
Manufacturer Part Number
NTD3813N-1G
Description
MOSFET N-CH 16V 9.6A/51A IPAK
Detailed Description
N-Channel 16 V 9.6A (Ta), 51A (Tc) 1.2W (Ta), 34.9W (Tc) Through Hole IPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25°C
9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.8 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
963 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
1.2W (Ta), 34.9W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NTD38
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-NTD3813N-1G-ON
ONSONSNTD3813N-1G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD3813N-1G
Documents & Media
Datasheets
1(NTD3813N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 19/Dec/2008)
Quantity Price
-
Substitutes
-