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Part Number Overview
Manufacturer Part Number
SIRC16DP-T1-GE3
Description
MOSFET N-CH 25V 60A PPAK SO-8
Detailed Description
N-Channel 25 V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.96mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
5150 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
54.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIRC16
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIRC16DP-T1-GE3TR
SIRC16DP-T1-GE3CT
SIRC16DP-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIRC16DP-T1-GE3
Documents & Media
Datasheets
1(SIRC16DP)
PCN Design/Specification
()
HTML Datasheet
1(SIRC16DP)
Quantity Price
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