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Part Number Overview
Manufacturer Part Number
STD3NM60-1
Description
MOSFET N-CH 600V 3A IPAK
Detailed Description
N-Channel 600 V 3A (Tc) 42W (Tc) Through Hole I-PAK
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
324 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STD3N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STD3NM60-1
Documents & Media
Datasheets
1(ST(D3,P4)NM60(-1))
HTML Datasheet
1(ST(D3,P4)NM60(-1))
Quantity Price
-
Substitutes
Part No. : IPU80R1K4P7AKMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 16
Unit Price. : $1.03000
Substitute Type. : Similar
Quantity Available. : 16
Unit Price. : $1.03000
Substitute Type. : Similar