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Part Number Overview
Manufacturer Part Number
IRF830
Description
MOSFET N-CH 500V 4.5A TO220AB
Detailed Description
N-Channel 500 V 4.5A (Tc) 100W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
PowerMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
IRF8
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-2732-5
2156-IRF830-ST
HARSTMIRF830
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics IRF830
Documents & Media
Datasheets
1(IRF830)
Quantity Price
-
Substitutes
Part No. : AOT5N50
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Part No. : IRF830PBF
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Substitute Type. : Similar
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Substitute Type. : Similar