Part Number Overview

Manufacturer Part Number
IAUT165N08S5N029ATMA1
Description
MOSFET N-CH 80V 165A 8HSOF
Detailed Description
N-Channel 80 V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™-5
Package
Tape & Reel (TR)
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6370 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-1
Package / Case
8-PowerSFN
Base Product Number
IAUT165

Environmental & Export Classifications

REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SP001475880
448-IAUT165N08S5N029ATMA1TR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IAUT165N08S5N029ATMA1

Documents & Media

Datasheets
1(IAUT165N08S5N029)
HTML Datasheet
1(IAUT165N08S5N029)

Quantity Price

Quantity: 2000
Unit Price: $1.91292
Packaging: Tape & Reel (TR)
MinMultiplier: 2000

Substitutes

Part No. : IAUT165N08S5N029ATMA2
Manufacturer. : Infineon Technologies
Quantity Available. : 1,976
Unit Price. : $3.02000
Substitute Type. : Parametric Equivalent