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Part Number Overview
Manufacturer Part Number
SUP85N10-10P-GE3
Description
MOSFET N-CH 100V 85A TO220AB
Detailed Description
N-Channel 100 V 85A (Tc) 3.75W (Ta), 227W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4660 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP85
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP85N10-10P-GE3
Documents & Media
Datasheets
1(Packaging Information)
HTML Datasheet
1(SUP85N10-10P)
Quantity Price
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