China
Spain
Rusia
Italy
GermanyRF1S9530
Part Number Overview
Manufacturer Part Number
RF1S9530
Description
-12A, -100V, 0.3 OHM, P-CHANNEL
Detailed Description
P-Channel 100 V 12A (Tc) 75W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
161
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
HARHARRF1S9530
2156-RF1S9530
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S9530
Documents & Media
Datasheets
1(IRF9530)
Quantity Price
Quantity: 161
Unit Price: $1.87
Packaging: Bulk
MinMultiplier: 161
Packaging: Bulk
MinMultiplier: 161
Substitutes
-