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Part Number Overview
Manufacturer Part Number
STB21NM50N-1
Description
MOSFET N-CH 500V 18A I2PAK
Detailed Description
N-Channel 500 V 18A (Tc) 140W (Tc) Through Hole I2PAK
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1805-STB21NM50N-1
-497-5727
497-5727
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB21NM50N-1
Documents & Media
Datasheets
1(STx21NM50N(-1))
Product Training Modules
1(STMicroelectronics ST MOSFETs)
HTML Datasheet
1(STx21NM50N(-1))
Quantity Price
-
Substitutes
Part No. : SPI21N50C3XKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 450
Unit Price. : $4.30000
Substitute Type. : Similar
Quantity Available. : 450
Unit Price. : $4.30000
Substitute Type. : Similar