Part Number Overview

Manufacturer Part Number
IPD60R800CEATMA1
Description
MOSFET N-CH 600V 5.6A TO252-3
Detailed Description
N-Channel 600 V 5.6A (Tc) 48W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
17.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
373 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPD60R800CEATMA1TR
INFINFIPD60R800CEATMA1
SP001276028
IPD60R800CEATMA1CT
2156-IPD60R800CEATMA1-ITTR-ND
2156-IPD60R800CEATMA1
IPD60R800CEATMA1DKR

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD60R800CEATMA1

Documents & Media

Datasheets
1(IPD60R800CE, IPA60R800CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPD60R800CE, IPA60R800CE)

Quantity Price

-

Substitutes

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Manufacturer. : Infineon Technologies
Quantity Available. : 2,503
Unit Price. : $0.88000
Substitute Type. : Direct
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Manufacturer. : IXYS
Quantity Available. : 70
Unit Price. : $2.66000
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Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 1,423
Unit Price. : $1.53000
Substitute Type. : Similar