Part Number Overview

Manufacturer Part Number
SCT30N120
Description
SICFET N-CH 1200V 40A HIP247
Detailed Description
N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCT30N120 Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT30

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCT30N120

Documents & Media

Datasheets
()
Product Training Modules
()
Featured Product
1(SCT20N120 and SCT30N120 Silicon-Carbide Power MOSFETs)
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
HTML Datasheet
1(Fine Tune SIC MOSFET Gate Driver)
EDA Models
1(SCT30N120 Models)

Quantity Price

Quantity: 510
Unit Price: $15.64288
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $18.3315
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $19.55367
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $23.59
Packaging: Tube
MinMultiplier: 1

Substitutes

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Unit Price. : $17.31000
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Manufacturer. : Microchip Technology
Quantity Available. : 144
Unit Price. : $12.80000
Substitute Type. : Similar