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Part Number Overview
Manufacturer Part Number
IRF630
Description
MOSFET N-CH 200V 9A TO220AB
Detailed Description
N-Channel 200 V 9A (Tc) Through Hole TO-220AB
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
353
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRF630-HC
HARHARIRF630
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRF630
Documents & Media
Datasheets
1(IRF630)
Quantity Price
Quantity: 353
Unit Price: $0.85
Packaging: Tube
MinMultiplier: 353
Packaging: Tube
MinMultiplier: 353
Substitutes
-