Part Number Overview

Manufacturer Part Number
FCA36N60NF
Description
MOSFET N-CH 600V 34.9A TO3PN
Detailed Description
N-Channel 600 V 34.9A (Tc) 312W (Tc) Through Hole TO-3PN
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
450
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
FRFET®, SupreMOS®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
34.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
95mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4245 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
312W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FCA36N60

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCA36N60NF

Documents & Media

Datasheets
1(FCA36N60NF)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Mar/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Assembly Site Transfer 06/Apr/2015)
PCN Packaging
()

Quantity Price

-

Substitutes

Part No. : TK31J60W,S1VQ
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 25
Unit Price. : $8.94000
Substitute Type. : Similar
Part No. : TK31J60W5,S1VQ
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 25
Unit Price. : $9.28000
Substitute Type. : Similar