Part Number Overview

Manufacturer Part Number
FCP9N60N-F102
Description
MOSFET N-CHANNEL 600V 9A TO220F
Detailed Description
N-Channel 600 V 9A (Tc) 83.3W (Tc) Through Hole TO-220F
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FCP9N60N-F102 Models
Standard Package
800
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack
Base Product Number
FCP9N60

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

FCP9N60N_F102-ND
2832-FCP9N60N-F102
2832-FCP9N60N-F102-488
FCP9N60N_F102

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCP9N60N-F102

Documents & Media

Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Mold Chg 28/Oct/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FCP9N60N-F102 Models)

Quantity Price

-

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