China
Spain
Rusia
Italy
GermanySI5401DC-T1-GE3
Part Number Overview
Manufacturer Part Number
SI5401DC-T1-GE3
Description
MOSFET P-CH 20V 5.2A 1206-8
Detailed Description
P-Channel 20 V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
32mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5401
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5401DC-T1-GE3
Documents & Media
Datasheets
1(SI5401DC)
Environmental Information
()
HTML Datasheet
1(SI5401DC)
Quantity Price
-
Substitutes
Part No. : NTHS4101PT1G
Manufacturer. : onsemi
Quantity Available. : 8,830
Unit Price. : $85.77000
Substitute Type. : Similar
Quantity Available. : 8,830
Unit Price. : $85.77000
Substitute Type. : Similar