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Part Number Overview
Manufacturer Part Number
IGN1011L70
Description
RF MOSFET GAN HEMT 50V PL32A2
Detailed Description
RF Mosfet 50 V 22 mA 1.03GHz ~ 1.09GHz 22dB 80W PL32A2
Manufacturer
Integra Technologies Inc.
Standard LeadTime
4 Weeks
Edacad Model
Standard Package
15
Supplier Stocks
Technical specifications
Mfr
Integra Technologies Inc.
Series
-
Package
Bulk
Product Status
Active
Technology
GaN HEMT
Frequency
1.03GHz ~ 1.09GHz
Gain
22dB
Voltage - Test
50 V
Current Rating (Amps)
-
Noise Figure
-
Current - Test
22 mA
Power - Output
80W
Voltage - Rated
120 V
Mounting Type
Chassis Mount
Package / Case
PL32A2
Supplier Device Package
PL32A2
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2251-IGN1011L70
EAR99
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/RF FETs, MOSFETs/Integra Technologies Inc. IGN1011L70
Documents & Media
Datasheets
1(IGN1011L70)
Quantity Price
Quantity: 15
Unit Price: $203.29267
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Quantity: 1
Unit Price: $212.26
Packaging: Bulk
MinMultiplier: 1
Packaging: Bulk
MinMultiplier: 1
Substitutes
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